? 2003 ixys all rights reserved ds98986d(05/03) high voltage igbt ixgh 20n120b ixgt 20n120b c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixgh) features z high voltage igbt for resonant power supplies - induction heating - rice cookers z international standard packages jedec to-268 surface and jedec to-247 ad z low switching losses, low v (sat) z mos gate turn-on - drive simplicity advantages z high power density z suitable for surface mounting z easy to mount with 1 screw, (isolated mounting screw hole) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1200 v v ge(th) i c = 250 a, v ce = v ge 2.5 5 v i ces v ce = v ces t j = 25 c50 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 20a, v ge = 15 v 2.9 3.4 v t j = 125 c 2.8 3.8 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c40a i c110 t c = 110 c20a i cm t c = 25 c, 1 ms 80 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 80 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering smd devices for 10 s 260 c m d mounting torque (m3) (to-247) 1.13/10nm/lb.in. weight to-247 ad 6 g to-268 4 g to-268 (ixgt) g e c (tab) v ces = 1200 v i c25 =40a v ce(sat) = 3.4 v t fi(typ) = 160 ns preliminary data sheet
symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 20a; v ce = 10 v, 12 18 s pulse test, t 300 s, duty cycle 2 % c ies 1700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 95 pf c res 35 pf q g 72 nc q ge i c = 20a, v ge = 15 v, v ce = 0.5 v ces 12 nc q gc 27 nc t d(on) 25 ns t ri 15 ns t d(off) 150 280 ns t fi 160 320 ns e off 2.1 3.5 mj t d(on) 25 ns t ri 18 ns e on 0.9 mj t d(off) 270 ns t fi 360 ns e off 3.5 mj r thjc 0.65 k/w r thck (to-247) 0.25 k/w ixys reserves the right to change limits, test conditions, and dimensions. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 ad outline inductive load, t j = 125 c i c = 20a, v ge = 15 v v ce = 0.8 v ces , r g = r off = 10 ? inductive load, t j = 25 c i c = 20 a, v ge = 15 v v ce = 0.8 v ces , r g = r off = 10 ? min recommended footprint ixgh 20n120b ixgt 20n120b to-268 outline dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343
ixgh 20n120b ixgt 20n120b ? 2003 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 20 40 60 80 10 0 12 0 14 0 16 0 02 46 81012141618 v ce - volts i c - amperes v g e = 1 5v 9v 1 1v 7v 5v 13 v fig. 3. output characteristics @ 125 deg. c 0 5 10 15 20 25 30 35 40 0.511.522.533.544.55 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1 v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 5 10 15 20 25 30 35 40 1 1.5 2 2.5 3 3.5 4 4.5 5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1 v 5v 7v 9v fig. 5. input admittance 0 10 20 30 40 50 60 70 80 345678910 v ge - volts i c - amperes t j = -40oc 25oc 1 25oc fig. 6. transconductance 0 3 6 9 12 15 18 21 24 27 0 10 20304050607080 i c - amperes g f s - siemens t j = -40oc 25oc 1 25oc fig. 4. temperature dependence of v ce(sat) 0.7 0.8 0.9 1 1. 1 1. 2 1. 3 1. 4 -50 -25 0 25 50 75 100 125 150 t j - degr ees centigr ade v ce (s at) - normalize d i c = 40a i c = 20a i c = 1 0a v g e = 1 5v
ixgh 20n120b ixgt 20n120b ixys reserves the right to change limits, test conditions, and dimensions. fig. 11. capacitance 10 10 0 1000 10000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - p f c i es c oes c res f = 1 m hz fig. 10. gate charge 0 3 6 9 12 15 0 10 2030 4050607080 q g - nanocoulombs v g e - volts v c e = 600v i c = 20a i g = 1 0ma fig. 7. dependence of e off on r g 0 2 4 6 8 10 12 14 0 102030405060 r g - ohms e off - millijoules i c = 1 0a i c = 20a i c = 40a t j = 1 25oc v g e = 1 5v v c e = 960v fig. 8. dependence of e off on i c 2 4 6 8 10 12 14 10 15 20 25 30 35 40 i c - amperes e off - millijoules r g = 5 ohms r g = 56 ohms t j = 1 25oc v g e = 1 5v v c e = 960v fig. 9. dependence of e off on t emperature 0 2 4 6 8 10 12 14 16 0 255075100125150 t j - degrees centigrade e off - millijoules i c = 40a i c = 20a i c = 1 0a v g e = 1 5v v c e = 960v so lid lines - r g = 56 ohms dashed lines - r g = 5 ohms fig. 12. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 300 500 700 900 1100 1300 v ce - volts i c - amperes t j = 125 o c r g = 10 ohms dv/dt < 10v/ns ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343
ixgh 20n120b ixgt 20n120b fig. 13. maximum transient thermal resistance 0.1 1 1 10 100 1000 puls e w idth - millis e c o nd s r (th) j c - (oc/w) ? 2003 ixys all rights reserved
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